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This story is from the category Computing Power
Posted by: Site Administration Date posted: 09/08/2006 The University of Wisconsin-Madison has engineered new thin-film semiconductor techniques, thatshould allow 3D processors, bypassing Moore’s law physical limits. A team led by electrical and computer engineer Zhenqiang (Jack) Ma and materials scientist Max Lagally have developed a process to remove a single-crystal film of semiconductor from the substrate on which it is built. This thin layer (only a couple of hundred nanometers thick) can be transferred to glass, plastic or other flexible materials, opening a wide range of possibilities for flexible electronics. In addition, the semiconductor film can be flipped as it is transferred to its new substrate, making its other side available for more components. This doubles the possible number of devices that can be placed on the film. By repeating the process, layers of double-sided, thin-film semiconductors can be stacked together, creating powerful, low-power, three-dimensional electronic devices. "It's important to note that these are single-crystal films of strained silicon or silicon germanium," says Ma. "Strain is introduced in the way we form the membrane. Introducing strain changes the arrangement of atoms in the crystal such that we can achieve much faster device speed while consuming less power." "This is potentially a paradigm shift," says Lagally. "The ability to create fast, low-power, multilayer electronics has many exciting applications. Silicon germanium membranes are particularly interesting. Germanium has a much higher adsorption for light than silicon. By including the germanium without destroying the quality of the material, we can achieve devices with two to three orders of magnitude more sensitivity." See the full Story via external site: www.news.wisc.edu Most recent stories in this category (Computing Power): 08/02/2010: Toshiba Develops SRAM Circuit Technique that Secures Low Voltage Operation of System LSI |
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