Untitled Document
Not a member yet? Register for full benefits!

Username
Password
 SKoreans demonstrate spin-injected field effect transistor

This story is from the category Computing Power
Printer Friendly Version
Email to a Friend (currently Down)

 

 

Date posted: 18/09/2009

South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.

Researchers at the state-run Korea Institute of Science and Technology (KIST) said the new transistor uses not only the on-off state of electric current but also electrons' spinning directions -- clockwise and counter-clockwise -- to handle information. It consumes less energy than existing semiconductors and opens the way for no-booting computers.

First conceptualized in the 1990s, "spin-injected field effect transistors" are seen as the next generation devices to replace the conventional metal-oxide semiconductor transistors.

"The prototype spin transistor has paved the way for developing new computers that do not require the time-consuming booting process," Koo Hyun-Cheol, one of the researchers told AFP.

"It will also help develop devices which have memory and central processing units merged into a single chip," he said.

See the full Story via external site: www.physorg.com



Most recent stories in this category (Computing Power):

19/02/2017: Printable solar cells just got a little closer

04/02/2017: 1,000x more efficient nano-LED offers possibility of faster processors

31/01/2017: For this metal, electricity flows, but not heat

26/01/2017: Google brings AI to Raspberry Pi

12/01/2017: Researchers turn memory chips into processors to speed up computing tasks

08/01/2017: Intel announces Compute Card – A full PC the size of a Credit Card

23/12/2016: Scalable energy harvesting of unused mechanical energy in the environment

28/11/2016: Japan kicks off AI supercomputer project